电子元件与材料Issue(6)：28-32,5.DOI:10.14106/j.cnki.1001-2028.2015.06.008
物理冶金多晶硅太阳电池叠层钝化减反射结构模拟
Simulation on stack-layer passivation antireflection structure of metallurgical grade silicon solar cells
摘要
Abstract
PC1D simulation software was used to simulate SiO2/SiNx/SiNx stack-layer passivation antireflection structure of p-type metallurgical grade silicon solar cells. The simulation results show that it can significantly improve external quantum efficiency and surface antireflection of the cell when a SiO2 passivation layer is introduced in the SiNx/SiNx double-layer antireflection structure, and ultimately improve the cell conversion efficiency. With the increasing of SiO2 film thickness, the surface reflectance of the cell increases at first and then decreases, while the external quantum efficiency and conversion efficiency of the cell show an opposite trend. There is little change on the efficiency of the cell when the thickness of SiO2 passivation film ranges from 2 nm to 8 nm, while the cell’s efficiency significantly decreases when the thickness of silicon dioxide layer is greater than 8 nm. Maximum efficiency (18.04%) appears when the thickness of silicon dioxide layer in the SiO2/SiNx/SiNx stack-layer passivation antireflection structure is 6 nm.关键词
冶金多晶硅/太阳电池/SiO2/SiNx/SiNx/钝化/减反射/PC1D模拟Key words
metallurgical grade silicon/solar cells/SiO2/SiNx/SiNx/passivation/antireflection/PC1D simulation分类
信息技术与安全科学引用本文复制引用
邹凯,和江变,李健,马承鸿..物理冶金多晶硅太阳电池叠层钝化减反射结构模拟[J].电子元件与材料,2015,(6):28-32,5.基金项目
呼和浩特市太阳能电池产业化工程研究中心创新能力建设项目资助(No.2014150103000018)；呼和浩特市光伏系统工程技术研究中心项目资助(2014-39-8)；呼和浩特市“十二五”重大科技专项资助项目(No.2012150103000167) （No.2014150103000018）
