电子元件与材料Issue(6)：57-60,4.DOI:10.14106/j.cnki.1001-2028.2015.06.015
一种分段曲率补偿带隙基准源设计
Design of a bandgap reference voltage with piecewise curvature compensation
摘要
Abstract
A new bandgap reference voltage with low temperature drift and piecewise curvature compensation was designed, which was based on the traditional bandgap reference construct. It used the exponential response curve between leakage current and grid voltage when the N type MOS-FET was working in the sub-threshold region to compensate the temperature characteristic curve at the high and low temperatures. Simulation was conducted by using UMC 0.25μm BCD process. Simulation result shows that the quiescent current is 7.11μAwhen power supply is 5 V. The change amplitude of reference voltage is 148μV when the power supply is from 2.5 V to 5.5 V. The temperature coefficient is 1.18×10–6/℃ from –40℃ to 145℃. The PSRR is –87 dB.关键词
带隙基准/亚阈值/曲率补偿/温漂/温度系数/电源抑制比Key words
bandgap reference/sub-threshold/curvature compensation/temperature drift/temperature coefficient/PSRR分类
信息技术与安全科学引用本文复制引用
李睿,冯全源..一种分段曲率补偿带隙基准源设计[J].电子元件与材料,2015,(6):57-60,4.基金项目
国家自然科学基金面上项目资助（No.61271090）；四川省科技支撑计划项目资助 （）
