电子元件与材料Issue(6)：87-89,3.DOI:10.14106/j.cnki.1001-2028.2015.06.022
基于片上变压器耦合的CMOS功率放大器设计
Design of on-chip transformer-based CMOS power amplifier
摘要
Abstract
A fully integrated CMOS power amplifier (PA) operating at 2 GHz was designed, with on-chip transformers-based match networks used to realize the conversion of single-end between differential signals and the impedance match of input and output port. On-chip transformer was simulated using electromagnetic simulator ADS Momentum, and the efficiencies of input match, inter-stage and output match networks were 74.2%, 75.5% and 78.4%, respectively. The PA was designed and simulated in Agilent’s ADS using TSMC 65 nm CMOS spice model. According to the simulation results of PA operating at 2 GHz and supplied 2.5 V, input and output impedances are fully matched to 50Ω(S11 = –22.4 dB,S22= –13.5 dB), power gain is 33.2 dB, the saturated output power is 23.4 dBm, the maximum PAE is 35.3%, and the chip’s area is only 1.01 mm2.关键词
CMOS/功率放大器/片上变压器/匹配/无源器件/电磁仿真Key words
CMOS/power amplifier/on-chip transformer/match/passives device/electromagnetic simulation分类
信息技术与安全科学引用本文复制引用
徐元中,梅菲,周鑫..基于片上变压器耦合的CMOS功率放大器设计[J].电子元件与材料,2015,(6):87-89,3.基金项目
国家自然科学基金资助（No.51371079）；湖北省大学生创新创业训练计划项目资助 （）
