电子元件与材料Issue(8)：42-46,5.DOI:10.14106/j.cnki.1001-2028.2015.08.011
应变补偿InGaN/AlGaN超晶格改善近紫外LED性能
Near-UV LED photoelectric properties of strain-compensated InGaN/AlGaN superlattice layers
摘要
Abstract
The strain-compensated In0.1Ga0.9N/Al0.2Ga0.8N superlattice structure was designed by strain equilibrium theory. To verify the structure with low stress, p-InGaN/p-AlGaN superlattice lattice layers (SLs) with a strain-compensated structure was fabricated by epitaxial growth technology, and low stress in the structure was verified by double-crystal x-ray diffraction (XRD) and Raman spectroscopy (Raman). The experimental results show that the near-UV LEDs with strain-compensated In0.1Ga0.9N/Al0.2Ga0.8N SLs have higher emission power over their conventional counterparts with GaN barriers due to the mitigation of the quantum-confined Stark effect and the suppression of electron leakage. Furthermore, the performances of the near-UV LEDs with proposed InGaN/AlGaN barriers can be further improved without electron blocking layers.关键词
应变平衡/InGaN/AlGaN超晶格/应变补偿/极化效应/p型欧姆接触电阻/近紫外LEDKey words
strain equilibrium/InGaN/AlGaN superlattice layers (SLs)/strain compensated/polarization effect/p-type ohmic contanct resistance/near-UV LEDs分类
信息技术与安全科学引用本文复制引用
尹以安,章勇,范广涵,李述体..应变补偿InGaN/AlGaN超晶格改善近紫外LED性能[J].电子元件与材料,2015,(8):42-46,5.基金项目
国家自然科学基金项目资助（No.61176043）；广州市科技计划项目资助（No.201510010229；No.2014J4100056）；广东省科技计划资助项目 （）
