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LDMOS微波功放器设计

杨树坤 李俊 唐剑平 王涛

电子与封装Issue(4):18-21,4.
电子与封装Issue(4):18-21,4.

LDMOS微波功放器设计

LDMOS Power Ampilier Designe

杨树坤 1李俊 1唐剑平 1王涛1

作者信息

  • 1. 中国电子科技集团公司第58研究所,江苏无锡214035
  • 折叠

摘要

Abstract

In this paper, first from three angles, a reasonable choice for amplifiers, amplifier state to identify and match amp circuit design to discuss the different factors which should be taken into account in the design of the power amplifier circuit programs. And then take microwave power amplifier of the actual needs of the project for example, in accordance with the technical requirements of the product, combined with the experience accumulated in the microwave amplifier design and production. A P-band power amplifier with typical gain of 15 dB is designed in this paper. By reasonably choosing transistor and its operating point, the circuit topology design, matched impendence, the final power ampilier has the features of stable output power, low gain flatness,high linearity and high reliability etc.

关键词

功率放大器/阻抗匹配/LDMOS

Key words

power ampilier/matched impendence/LDMOS

分类

信息技术与安全科学

引用本文复制引用

杨树坤,李俊,唐剑平,王涛..LDMOS微波功放器设计[J].电子与封装,2013,(4):18-21,4.

电子与封装

1681-1070

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