电子与封装Issue(5)：27-30,4.
65nm n沟MOSFET的重离子辐照径迹效应研究*
Track Effects Study in the 65 nm n-MOSFET Irradiated by Heavy Ions
摘要
Abstract
Heavy ions may have influence on the electronic characteristics of MOS devices since it could generate permanent track effect in SiO2 layers. This paper performs Au and Sn ionic Monte Carlo simulations by using Geant 4 software and then focus on the analysis of energy deposition and track effects of high energy particles in SiO2 layers. Additionally, based on the analysis before, a Sn ionic irradiation experiment has been done on specially designed 65nm n-MOSFET devices and it has been found that an apparent increase before and after irradiation has appeared in Ids and Ig. This paper aims at analyzing the reasons why various electronic characteristics of those devices, including threshold voltage, transconductance, channel current and gate current, have changed before and after irradiation.关键词
重离子辐照/径迹/65nm n沟MOSFET/模拟Key words
heavy ion irradiation/track/65 nm n channel MOSFET/simulation分类
信息技术与安全科学引用本文复制引用
高婷婷,王玲,苏凯,马瑶,袁菁,龚敏..65nm n沟MOSFET的重离子辐照径迹效应研究*[J].电子与封装,2013,(5):27-30,4.基金项目
国家自然科学基金项目 （）
