电子元件与材料Issue(10)：40-42,63,4.DOI:10.14106/j.cnki.1001-2028.2015.10.010
相变存储器失效时间分析
Analysis of failure time in phase change memory
摘要
Abstract
An acceleration test was carried out to have a deeper understanding on retention characterization of failure time in phase change memory. As the time flows, the resistance would decrease under a high temperature, which can also be induced from the Arrhenius model. The higher the temperature, the shorter the failure time. The distributions for different values of initial RESET resistance suggested that improving the active volume of chalcogenide amorphous region will be beneficial for the retention reliability. The failure time distribution of different cells also represent a hypothesis that the grain growth with nucleation existing in the amorphous region induces a shorter time, while the grain growth at the boundary between amorphous/crystalline regions induces a longer one.关键词
相变存储器/RESET/失效时间/温度/阻值/晶粒生长Key words
phase change memory(PCM)/RESET/failure time/temperature/resistance/crystal grain growth分类
信息技术与安全科学引用本文复制引用
魏宏阳,蔡道林,陈一峰,霍如如,宋志棠..相变存储器失效时间分析[J].电子元件与材料,2015,(10):40-42,63,4.基金项目
中国科学院战略性先导科技专项资助（No. XDA09020402）；国家重点基础研究发展计划资助（No.2013CBA01900；No.2010CB934300；No.2011CBA00607；No.2011CB9328004）；国家集成电路重大专项资助（No.2009ZX02023-003）；国家自然科学基金资助 （）
