电子元件与材料Issue(10)：43-47,5.DOI:10.14106/j.cnki.1001-2028.2015.10.011
前结背接触晶硅太阳电池发射区研究
Emitter study of front junction back contact crystalline silicon solar cells
摘要
Abstract
By using Silvaco-TCAD simulation software, the influences of the emitter surface concentration (cE), the junction depth (xj) and the emitter fraction (EF) on the output characteristics of P-type front junction back contact crystalline silicon solar cell was analyzed. The results show that the upper surface emitter surface concentration and the junction depth of the front junction back contact crystalline silicon solar cell based on conventional low-cost P-type silicon substrate (CZ growth method, the resistivity is 1.5Ω·cm, the minority carrier life is 10μs) have a noticeable effect on output characteristics of solar cells. The higher the upper surface emitter surface concentration, the deeper the junction depth, the lower the short wavelength incident light external quantum efficiency. When the upper surface emitter surface concentration is 1×1019 cm–3 and the junction depth is 0.2μm,the solar cell conversion efficiency reaches 20.72%. The side-surface and under-surface emitter surface concentration and the junction depth have a slight effect on output characteristics of solar cells, while the side-surface and under-surface emitter fraction has a noticeable effect on output characteristics of solar cells. The greater the side-surface and under-surface emitter fraction, the higher the external quantum efficiency and conversion efficiency.关键词
前结背接触/太阳电池/发射区/表面浓度/结深/量子效率/转换效率Key words
front junction back contact/solar cell/emitter/surface concentration/junction depth/quantum efficiency/conversion efficiency分类
信息技术与安全科学引用本文复制引用
周涛,陆晓东,吴元庆,刘兴辉,吴春瑜..前结背接触晶硅太阳电池发射区研究[J].电子元件与材料,2015,(10):43-47,5.基金项目
国家自然科学基金资助项目 （）
