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热-电耦合下倒装芯片封装焊点的电迁移失效研究

刘培生 杨龙龙 刘亚鸿

电子元件与材料Issue(10):95-98,4.
电子元件与材料Issue(10):95-98,4.DOI:10.14106/j.cnki.1001-2028.2015.10.024

热-电耦合下倒装芯片封装焊点的电迁移失效研究

Electromigration failure investigation of solder joints in flip chip packaging under thermal-electric coupling

刘培生 1杨龙龙 1刘亚鸿1

作者信息

  • 1. 南通大学 江苏省专用集成电路设计重点试验室,江苏 南通 226019
  • 折叠

摘要

Abstract

Electro-migration induced by thermoelectric interaction is a very important reliability problem for flip chip packages. 3D model of FCBGA was established. The distributions of temperature, current density, Joule heat in flip chip solder joints under thermoelectric interaction were researched. It is found that there is serious Joule heat and current crowding phenomenons. The reason that hot-spot occurred was analyzed. It is found that hot spots play a key role in the development of cavity in the solder bumps.

关键词

倒装芯片/可靠性/焦耳热/电流密度/电迁移/封装

Key words

flip chip/reliability/Joule heat/current density/electro-migration/packaging

分类

信息技术与安全科学

引用本文复制引用

刘培生,杨龙龙,刘亚鸿..热-电耦合下倒装芯片封装焊点的电迁移失效研究[J].电子元件与材料,2015,(10):95-98,4.

电子元件与材料

OACSCDCSTPCD

1001-2028

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