电子元件与材料2016，Vol.35Issue(3)：1-4,4.DOI:10.14106/j.cnki.1001-2028.2016.03.001
Si3N4陶瓷材料的构筑及缺陷结构研究进展
Research progress in synthesis and defect structure of the Si3N4 ceramic materials
摘要
Abstract
As structural ceramics, theSi3N4 ceramic, because of its excellent thermodynamic stability, chemical stability, mechanical properties and the advantages of low density structure has been developed dramatically in diverse fields, such as engineering construction, electronic components, electrical products, which has the value for widespread practical application. However, the Si3N4ceramic also possesses some drawbacks in the fields of impurities in the process of preparation, enhanced coagulation, big crystal bulge and large pores, and it could reduce the mechanical property of Si3N4ceramic. In this study, combined with practical engineering application of Si3N4 ceramic intrinsic defects and the electronic structure are summarized. At the same time, the research progress and application prospect at domestic and foreign of Si3N4 ceramic are systematically introduced. Moreover, advanced synthetic technology and research methods are discussed, respectively. According to the performance requirements and defect standard of engineering materials, the future trend of application and development direction of Si3N4 ceramic used as electronic components are also pointed out.关键词
Si3N4陶瓷/本征缺陷/综述/电子结构/应用/机理/掺杂Key words
Si3N4 ceramic/intrinsic defect/review/electronic structure/application/mechanism/doping分类
化学化工引用本文复制引用
吴芬,杨亚云,胡晓,林文松,邹义冬..Si3N4陶瓷材料的构筑及缺陷结构研究进展[J].电子元件与材料,2016,35(3):1-4,4.基金项目
上海市教委重点项目(No.13ZZ133)；上海工程技术大学研究生创新训练项目(No. E1-0903-15-01044)；国家级大学生创新创业训练基金项目(No.201210405006，20131005023) （No.13ZZ133）
