电子元件与材料2016，Vol.35Issue(3)：5-8,4.DOI:10.14106/j.cnki.1001-2028.2016.03.002
Gd2O3掺杂对BZT基陶瓷结构和介电性能的影响
Influence ofGd2O3 doping on structure and dielectric properties of barium zirconate titanate ceramic
郑占申 1何盼盼 1李远亮 1闫树浩 1侯潇宇1
作者信息
- 1. 华北理工大学 材料科学与工程学院 河北省无机非金属材料重点实验室，河北 唐山 063009
- 折叠
摘要
Abstract
BaZr0.1Ti0.9O3(BZT)+xGd2O3(0≤x≤0.7%) ceramics were prepared by solid state method at the temperature of 1 250, 1 280, 1 300, 1 330℃, respectively. Barium carbonate, zirconium dioxide, titanium dioxide were used as main raw materials, and gadolinium oxide was used as the dopant. X-ray diffraction results reveal that the main crystal phase of the ceramic sample with the Gd3+ doping doesn’t make any change, which is still the perovskite structure. SEM observation shows that, with the increase of Gd2O3 addition, the grain size of the ceramic decreases firstly, and then increases. Whenx=0.2%, 0.6%, the volume density and permittivity appear a higher value and the dielectric loss shows a trend of decreasing. Gd2O3 doping can improve the dielectric temperature change rate of the BZT ceramics.关键词
氧化钆/锆钛酸钡/掺杂/固相反应法/体积密度/介电性能Key words
gadolinium oxide/barium zirconate titanate/doping/solid reaction method/volume density/dielectric properties分类
信息技术与安全科学引用本文复制引用
郑占申,何盼盼,李远亮,闫树浩,侯潇宇..Gd2O3掺杂对BZT基陶瓷结构和介电性能的影响[J].电子元件与材料,2016,35(3):5-8,4.
