电子元件与材料2016，Vol.35Issue(4)：35-38,4.DOI:10.14106/j.cnki.1001-2028.2016.04.009
负偏压对磁控溅射Mg 2 Si薄膜的影响
Effects of negative bias on Mg2Si films deposited by DC magnetron sputtering
摘要
Abstract
Semiconducting Mg2Si films were fabricated by DC magnetron sputtering at various negative bias. Mg film was deposited onto Si substrate and subsequent low vacuum heat treatment was carried out. The deposition rate of Mg films, structure, surface topography and resistivity of Mg2Si films at different negative bias were studied. The results show that as the bias voltage increases, the deposition rate of Mg films decreases due to the effect of compaction and resputtering phenomena. The patterns of XRD and SEM indicate that Mg2Si films have more strong diffraction peaks and more smooth surface at zero bias voltage. The quality of Mg2Si films become worse with the increasing of bias voltage. Melting phenomenon appeares on the surface of Mg2Si film at a bias voltage of –150 V. With the increasing of bias voltage, the resistivity of Mg2Si films decreases firstly and then increases, and reaches the minimum at the bias of –90 V.关键词
Mg2Si薄膜/负偏压/磁控溅射/沉积速率/表面形貌/电阻率Key words
Mg2Si film/negative bias/magnetron sputtering/deposition rate/surface topography/resistivity分类
信息技术与安全科学引用本文复制引用
梁枫,廖杨芳,肖清泉,谢泉..负偏压对磁控溅射Mg 2 Si薄膜的影响[J].电子元件与材料,2016,35(4):35-38,4.基金项目
国家自然科学基金资助项目（No.61264004）；贵州省科学技术基金资助项目（No.黔科合J字[2013]2209号；贵州省科技攻关资助项目（No.黔科合GY字[2011]3015）；贵州省国际科技合作资助项目 （）
