电子元件与材料2016，Vol.35Issue(5)：27-30,4.DOI:10.14106/j.cnki.1001-2028.2016.05.007
一种低功耗亚阈值全MOS管基准电压源的设计
Design of a low power sub-threshold all MOSFET voltage reference
张涛 1陈远龙 1王影 1曾敬源 1张国俊1
作者信息
- 1. 电子科技大学 电子薄膜与集成器件国家重点实验室，四川 成都 610054
- 折叠
摘要
Abstract
A low power voltage reference circuit with all MOSFET structure was presented based on the different current characteristics of the MOSFET sub-threshold region, linear region and saturated region. The MOSFET working in linear region was designed to replace the ordinary resistance, to realize the all MOSFET characteristic, at the same time, the circuit layout area was effectively reduced. Besides, the output reference voltage was used as the bias of the MOSFET to further reduce power consumption. The circuit was designed with SMIC 0.18μm CMOStechnology. Results denote that the temperature coefficient is 22.6×10–6/℃ in –50-+150℃ with the power supply of 1.8 V, and the output voltage of the voltage reference circuit is 992 mV. The static current at 25℃ is 327.3 nA, and the power consumption is 0.59μW. Besides, the power supply rejection ratio is –25.36 dB at 10 kHz.关键词
基准电压源/全MOSFET/亚阈值/低功耗/低温度系数/线性区Key words
voltage reference/all MOSFET/sub-threshold/low power/low temperature coefficient/linear region分类
信息技术与安全科学引用本文复制引用
张涛,陈远龙,王影,曾敬源,张国俊..一种低功耗亚阈值全MOS管基准电压源的设计[J].电子元件与材料,2016,35(5):27-30,4.
