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π型阵列光电探测器研究与设计

李健 文化锋 柯昂 应祥岳 李军

电子元件与材料2016,Vol.35Issue(5):48-51,4.
电子元件与材料2016,Vol.35Issue(5):48-51,4.DOI:10.14106/j.cnki.1001-2028.2016.05.012

π型阵列光电探测器研究与设计

Research and design of typeπ array photodetector

李健 1文化锋 1柯昂 1应祥岳 1李军1

作者信息

  • 1. 宁波大学 信息科学与工程学院,浙江 宁波 315211
  • 折叠

摘要

Abstract

A novel arrays photodetectorbased on high order type π low pass filter circuit structure was proposed, which could achieve high output power and large operating bandwidth. According to the equivalent capacitance model of photodiode, the inductors were used to connect each photodiode in order to constitute the circuit structure which was similar to type π filter, thistype π arrayphotodetector synthesized the output current of each photodiode branch. And series capacitors were cascaded on the branch of the photodiode to increase the working bandwidth of the detector. Simulation results show that type π arrays detector’s working bandwidth is doubled compared with that of traveling-wave detector arrays (TWDA) when the capacitance cascaded in the photodiode branch is equal to the photodiode junction capacitance. Then by increasing the number of cascaded photodiode, the output power of the detector is improved, eventually, high power and large bandwidth photodetector can be designed.

关键词

光电探测器/低通滤波器/π型电路结构/行波探测器阵列/光电二极管/功率合成

Key words

photodetector/low pass filter/type π circuit structure/TWDA/photodiode/power combining

分类

信息技术与安全科学

引用本文复制引用

李健,文化锋,柯昂,应祥岳,李军..π型阵列光电探测器研究与设计[J].电子元件与材料,2016,35(5):48-51,4.

基金项目

国家自然科学基金资助项目(No.61371061);浙江省自然科学基金资助项目 ()

电子元件与材料

OACSCDCSTPCD

1001-2028

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