电子元件与材料2017，Vol.36Issue(1)：51-56,71,7.DOI:10.14106/j.cnki.1001-2028.2017.01.010
有源层表面性质对晶硅电池暗I-V特性的影响
Influences of active layer surfacepropertieson darkI-V characteristics of crystalline silicon solar cell
摘要
Abstract
The influences of surface dangling bonds, impurities and defects on the output parameters of crystalline silicon solar cellwere discussed by solving semiconductor device equations by finite difference method. The results show that the darkI-Vcharacteristic curves of the crystal silicon cell without bulk defects and surface defects or only with donor-like or acceptor-like surface dangling bonds, impurities and defects, are the same as thoseofthe ideal diodes under theforward bias voltage conditions.When the forward bias voltage is greater than 0.59V, which is the turn-on voltage of PN junction, these darkI-Vcharacteristic curves deviate from those ideal diodeI-Vcharacteristic curves, and the degree of deviationincreaseswith the increase of the concentrations of the surface dangling bonds, impurities and defects.When the functions of surface dangling bonds, impurities and defects are as the recombination centers, the darkI-Vcharacteristic curves of crystalline silicon cells deviate from the ideal diodeI-Vcharacteristic curves; the influences on the darkI-V characteristic curves decreases in order of the recombination-center-like, donor-like and acceptor-like.关键词
晶硅电池/暗I-V特性曲线/理想因子/总电流密度/缺陷态/有限差分Key words
crystalline silicon cells/darkI-Vcharacteristic curve/ideal factor/total current density/defect mode/finite difference分类
信息技术与安全科学引用本文复制引用
陆晓东,宋扬,王泽来,赵洋,张宇峰,吕航,张金晶..有源层表面性质对晶硅电池暗I-V特性的影响[J].电子元件与材料,2017,36(1):51-56,71,7.基金项目
国家自然科学基金资助（No.61575029；No.11304020）；辽宁省教育厅一般项目 （）
