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首页|期刊导航|电子元件与材料|烧结温度对Zn-Nb共掺Ba(Zr0.1Ti0.9)O3陶瓷微结构与介电性能的影响

烧结温度对Zn-Nb共掺Ba(Zr0.1Ti0.9)O3陶瓷微结构与介电性能的影响

王艳 苗康康 王晓玲 胡登卫

电子元件与材料2017,Vol.36Issue(3):16-20,5.
电子元件与材料2017,Vol.36Issue(3):16-20,5.DOI:10.14106/j.cnki.1001-2028.2017.03.004

烧结温度对Zn-Nb共掺Ba(Zr0.1Ti0.9)O3陶瓷微结构与介电性能的影响

Influence of sintering temperature on microstructure and dielectric property of Zn-Nb co-doped Ba(Zr0.1Ti0.9)O3ceramics

王艳 1苗康康 1王晓玲 1胡登卫1

作者信息

  • 1. 宝鸡文理学院 化学与化工学院,铁电功能材料工程(技术)研究中心,陕西 宝鸡 721013
  • 折叠

摘要

Abstract

The Zn and Nb co-doped Ba(Zr0.1Ti0.9)O3 ceramics were prepared by sol-gel method and the effect of sintering temperature on their phase structure,microstructure,electrical properties and dielectric relaxation was investigated. All sintered samples present a tetragonal perovskite structure and met the Electronic Industries Alliance Y5V specifications. As the sintering temperature increases, the maximum dielectric constant and grain sizes increase; while the dispersion coefficient of phase transformation(γ) first increases and then decreases. The ceramics sintered at 1280℃ exhibite permittivity of 14849 and tangent loss of 0.37%,with the average particle size of 3μm,a maximumγ of 1.9092, and a maximum density of 6.0346 g/cm3.

关键词

溶胶-凝胶法/Ba(Zr0.1Ti0.9)O3基陶瓷/Y5V/介电性能/介电弛豫/烧结温度

Key words

sol-gelmethod/Ba(Zr0.1Ti0.9)O3-basedceramics/Y5V/dielectric properties/dielectric relaxation/sintering temperature

分类

信息技术与安全科学

引用本文复制引用

王艳,苗康康,王晓玲,胡登卫..烧结温度对Zn-Nb共掺Ba(Zr0.1Ti0.9)O3陶瓷微结构与介电性能的影响[J].电子元件与材料,2017,36(3):16-20,5.

基金项目

陕西省教育厅项目(No. 16JK1040) (No. 16JK1040)

宝鸡文理学院校级重点项目(No. ZK16054) (No. ZK16054)

宝鸡市科技厅项目(No. 16RKX1-4) (No. 16RKX1-4)

电子元件与材料

OA北大核心CSCDCSTPCD

1001-2028

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