电子元件与材料2017，Vol.36Issue(3)：38-41,4.DOI:10.14106/j.cnki.1001-2028.2017.03.008
平板式外延炉大尺寸硅外延层的均匀性调控
Uniformity adjust and control of large-area Siepitaxial layer based on planar epitaxial furnace
李明达 1陈涛 1李普生 1薛兵1
作者信息
- 1. 中国电子科技集团公司 第四十六研究所,天津 300220
- 折叠
摘要
Abstract
Silicon epitaxial layer is a kind of mono crystalline silicon thin film, which deposites on the surface of the polished silicon substrate by using chemical vapor deposition method. In this study,using 150 mm large size silicon polished wafer as the substrate,with epitaxial layer high uniformity was deposited. Combining with epitaxial electrical parameters by using Fourier transform infrared spectroscopy (FT-IR) and resistivity testing apparatus, the relationship between flowing field, thermal field of the planar epitaxial furnance and uniformity of thickness, resistivity was studied. Finally, the epitaxial layer with good surface quality and non-uniformity less than 1% was prepared successfully.关键词
硅外延层/化学气相沉积/厚度/电阻率/均匀性/缺陷Key words
Siepitaxial layer/chemical vapor deposition/thickness/resistivity/uniformity/defect分类
信息技术与安全科学引用本文复制引用
李明达,陈涛,李普生,薛兵..平板式外延炉大尺寸硅外延层的均匀性调控[J].电子元件与材料,2017,36(3):38-41,4.
