电子元件与材料2017，Vol.36Issue(3)：42-47,6.DOI:10.14106/j.cnki.1001-2028.2017.03.009
Ga-N共掺氧化锌纳米线阵列制备及发光性能研究
Synthesis and optical properties of Ga-N codoped ZnO nanowire arrays
摘要
Abstract
Ga-N codoped ZnO nanowire arrays were synthesized on c-sapphire substrate by chemical vapor deposition (CVD) method, using NO gas and Ga2O3 powder as doping sources. The as prepared Ga-N codoped ZnO nanowire arrays were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) spectra. The results show that Ga-N codoped ZnO nanowire arraysare hexagonal wurtzite structure with the orientation of (002) direction. Both Ga and N atoms are uniformly doped in ZnO nanowires,whichis demonstrated by scanning transmission electron microscopy (STEM) measurement.Furthermore, the morphology of the doped ZnO nanowiresare transformed from hexagonal structure to cone type with the increase of doping contents, and the average length of ZnO nanowires decreases from 2 μm to 1 μm at the same time. XPS measurements show that the Ga 2p, Zn 2p and N 1s peaks are shifted to lower binding energy after doping in ZnO nanowires.The optoelectronics properties of the Ga-N codoped ZnO nanowires were also evaluated by PL spectra. The results show that the near-band edge UV emission peak and green emission peakare detected. In addition, the PL peaks positionsare shifted and the intensity rate of UV/Vis peaksis varied by changing the doping contents.关键词
化学气相沉积法/镓氮共掺/氧化锌纳米线阵列/高分辨透射电子显微镜/X射线光电子能谱/荧光光谱Key words
CVD/Ga-N codoped/ZnO nanowire arrays/HRTEM/XPS/PL分类
信息技术与安全科学引用本文复制引用
娄猛,张明光,苏明明,宋周周,沈典典,张翔晖..Ga-N共掺氧化锌纳米线阵列制备及发光性能研究[J].电子元件与材料,2017,36(3):42-47,6.基金项目
国家自然科学基金资助(No. 11504098) （No. 11504098）
