电子元件与材料2017，Vol.36Issue(4)：27-31,5.DOI:10.14106/j.cnki.1001-2028.2017.04.005
CeO2缓冲层对蓝宝石基Ba0.6Sr0.4TiO3薄膜结构和介电性能的影响
Effects of CeO2 buffer layer on structure and dielectric properties of Ba0.6Sr0.4TiO3 film prepared on sapphire substrate
摘要
Abstract
Pt/BST/Al2O3 and Pt/BST/CeO2/A12O3 interdigital capacitors were fabricated on the A12O3 (1102) substrates,in which CeO2 buffer layer and Ba0.6Sr0.4TiO3 (BST) film were prepared by magnetron sputtering and pulsed laser deposition,respectively.Impacts of CeO2 buffer layer on structure,surface morphology and dielectric properties of the deposited BST thin film were investigated using X-ray diffiraction system,atomic force microscope and LCR meter,respectively.It is found that BST film grown on Al2O3 (1102) substrates without the CeO2 buffer layer is polycrystalline,however,the one with buffer layer is epitaxial.Compared with the polycrystalline BST film without the CeO2 buffer layer,the grain size and root mean square roughness of BST film grown on CeO2 are relatively smaller.At a bias voltage of 40 V,the tunability and the minimum dielectric loss are 13.2％ and 0.021 for Pt/BST/Al2O3 capacitor and 25.8％ and 0.014 for Pt/BST/CeO2/A12O3 capacitor.These results indicate that CeO2 buffer layer has a great impact on the structure and dielectric properties of BST film grown on the Al2O3 substrate.关键词
Ba0.6Sr0.4TiO3薄膜/CeO2缓冲层/蓝宝石衬底/外延薄膜/介电性能/叉指电容器Key words
Ba0.6Sr0.4TiO3 film/CeO2 buffer layer/A12O3 substrates/epitaxial film/dielectric property/interdigital capacitor分类
数理科学引用本文复制引用
宋安英,宋建民,李振娜,代秀红,娄建忠,刘保亭..CeO2缓冲层对蓝宝石基Ba0.6Sr0.4TiO3薄膜结构和介电性能的影响[J].电子元件与材料,2017,36(4):27-31,5.基金项目
国家自然科学基金资助(No.11374086) （No.11374086）
河北省自然科学基金资助(No.E2014201188,E2014201063) （No.E2014201188,E2014201063）
