电子元件与材料2017，Vol.36Issue(4)：46-51,6.DOI:10.14106/j.cnki.1001-2028.2017.04.009
快速退火温度对Ag/SrTiO3/p+-Si器件阻变特性的影响
Effects of rapid thermal annealing temperature on resistance switching properties of Ag/SrTiO3/p+-Si devices
摘要
Abstract
SrTiO3 thin films were deposited on p+-Si substrates by sol-gel technology with rapid thermal annealing method,and the Ag/SrTiO3/p+-Si resistor devices were fabricated.The microstmctures and resistance switching properties of the SrTiO3 films which annealed at various temperatures were investigatec.The results indicate that all the SrTiO3 films show crystalline states,and the grain sizes of the films follow with the increase of the annealing temperature,when the annealing temperature reaches 750 ℃,impurity peak appears and the diffraction peaks of the film are not obvious.Bipolar resistive behaviors are observed in Ag/SrTiO3/p+-Si devices at different annealing temperatures,but the current appears the minimum value at a certain voltage when the annealing temperature reaches 850 ℃ or higher,and the devices annealed at 850 ℃ show a larger high/low resistance ratio of 103～104.The dominant resistive switching conduction mechanism of HRS is Schottky barrier emission when the annealing temperature reaches 800 ℃ or higher,and the LRS changes to space charge limited current (SCLC).The devices annealed at 850 ℃ show better anti-fatigue properties after 200 cycles.关键词
Ag/SrTiO3/p+-Si/快速退火/溶胶-凝胶/退火温度/阻变存储器/导电机制Key words
Ag/SrTiO3/p+-Si/rapid thermal annealing/sol-gel/annealing temperature/RRAM/conduction mechanism分类
信息技术与安全科学引用本文复制引用
张文博,王华,许积文,卢晓鹏,刘国保..快速退火温度对Ag/SrTiO3/p+-Si器件阻变特性的影响[J].电子元件与材料,2017,36(4):46-51,6.基金项目
国家自然科学基金资助(No.51262003) （No.51262003）
广西自然科学基金资助(No.2015GXNSFAA139253) （No.2015GXNSFAA139253）
