电子元件与材料2017，Vol.36Issue(4)：60-63,4.DOI:10.14106/j.cnki.1001-2028.2017.04.012
氧气等离子处理对MIM结构ZrAlO薄膜电容性能的影响
Influence of oxygen plasma treatments on electrical properties of metal-insulator-metal (MIM) structure capacitors based on ZrAlO thin films
摘要
Abstract
Oxygen plasma treatments were used for the low temperature improvement of electrical properties of metal-insulator-metal (MIM) structure capacitors based on ZrAlO thin films.The ZrA1O films for these capacitors were deposited by magnetron sputtering,and then treated by oxygen plasma without changing the vacuum conditions.Oxygen vacancies are considered as the main factors affecting electrical properties.Different plasma treating conditions including oxygen flow rate and plasma power result in variation of oxygen vacancies.The optimized plasma conditions are determined based on the analyses of oxygen vacancies related electrical properties.The leakage current is finally reduced by more than three orders of magnitude,and nonlinear voltage coefficient finally decreases by more than 60％.关键词
MIM电容/氧空位/ZrAlO/等离子/溅射/漏电流Key words
MIM capacitor/oxygen vacancies/ZrA1O/plasma/sputtering/leakage current分类
信息技术与安全科学引用本文复制引用
徐文彬,任高潮..氧气等离子处理对MIM结构ZrAlO薄膜电容性能的影响[J].电子元件与材料,2017,36(4):60-63,4.基金项目
福建省自然科学基金资助项目(No.2010J05136) （No.2010J05136）
福建省教育厅基金资助项目(No.JA11158) （No.JA11158）
