电子元件与材料2017，Vol.36Issue(6)：8-13,6.DOI:10.14106/j.cnki.1001-2028.2017.06.002
交叉杆结构忆阻器件的研究进展
Research progress of cross-bar resistive switching memory devices
摘要
Abstract
Memristor is considered to be a fourth passive device other than capacitors,inductors and resistors.It has the advantages of simple device structure,fast operation speed and low power consumption.It is nonvolatile with resistive memory characteristic of the original resistance.The cross-bar structure as a memristor,because of its simple structure,high integration level,high error tolerance and excellent parallel characteristics,receives the outside world wide attention and research.In this paper,the rise and development of the cross-bar resistive switching memory devices in recent years is reviewed,and the preparation and application of various memristors based on cross-bar structure is described.关键词
交叉杆/忆阻器/综述/记忆/柔性/并行性Key words
cross-bar/memristor/review/memory/flexibility/parallel characteristic分类
信息技术与安全科学引用本文复制引用
敬秦媛,程海峰,刘东青,张朝阳..交叉杆结构忆阻器件的研究进展[J].电子元件与材料,2017,36(6):8-13,6.基金项目
国家自然科学基金资助(No.51502344) （No.51502344）
