电子元件与材料2017，Vol.36Issue(6)：66-69,4.DOI:10.14106/j.cnki.1001-2028.2017.06.013
表面处理对肖特基接触的影响
Effects of surface treatment on Schottky contact
摘要
Abstract
The effects of different surface treatment methods on Ni/Au Schottky characteristic were investigated.It is found that the characteristics of Schottky contact are improved obviously by using O2plasma etching the surface of AlGaN and cleaning the surface with the solution of BOE (volume ratio of HF to NH4F is 1:7).The reverse leakage current is reduced by 1-2 orders compared with the sample treated by hydrochloric acid or ammonia water,which is 3.8× 10-5 A/mm on the bias of-50 V.In addition,the capacitance voltage test results show that the density of surface states of the sample treated by BOE is reduced effectively,which is in the range of 1013crn-2 ·eV-1 magnitude.Due to the decrease of surface state density,the Schottky barrier height increases,and the tunneling current and surface leakage reduce.关键词
AlGaN/GaN/肖特基接触/表面处理/反向漏电/电导法/表面态密度Key words
A1GaN/GaN/Schottky contact/surface treatment/reverse leakage current/conductance method/surface state density分类
信息技术与安全科学引用本文复制引用
霍荡荡,郑英奎,陈诗哲,魏珂,李培咸..表面处理对肖特基接触的影响[J].电子元件与材料,2017,36(6):66-69,4.基金项目
国家863高技术研究发展计划资助(No.2015AA016801) （No.2015AA016801）
