电子元件与材料2017，Vol.36Issue(6)：90-94,5.DOI:10.14106/j.cnki.1001-2028.2017.06.018
高阶曲率补偿低温漂系数带隙基准电压源设计
Design of a low temperature drift coefficient bandgap voltage reference with high-order curvature compensation
摘要
Abstract
A low temperature drift coefficient CMOS bandgap voltage reference source with high-order curvature compensation was designed.A self-biased cascode circuit structure was used to reduce the working supply voltage.Using the circuit structure of the current extraction,different currents were extracted at different temperatures.A positive temperature coefficient current could be extracted from its output branch in the period of high temperature;on the contrary,a negative temperature coefficient current could be extracted in the period of low temperature.In this way,the voltage reference source has multiple poles in the whole operating temperature range and the goal of lower temperature drift coefficient is achieved.Based on 0.5 μm CMOS process,the results of Cadence Spectre circuit simulation shows that the temperature characteristics are improved greatly in the temperature range of-40 ℃ to 145 ℃,and the temperature drift coefficient is 7.28 × 10-7/℃.The circuit can work properly when the power supply voltage is 2.4 V.关键词
带隙基准电压源/共源共栅/高阶曲率补偿/低温漂系数/高低温补偿/电流抽取Key words
bandgap reference/cascode/high-order curvature compensation/low temperature drift coefficient/high low temperature compensation/current extraction分类
信息技术与安全科学引用本文复制引用
夏俊雅,曾以成,崔晶晶..高阶曲率补偿低温漂系数带隙基准电压源设计[J].电子元件与材料,2017,36(6):90-94,5.基金项目
国家自然科学基金资助项目(No.61471310) （No.61471310）
