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Sb含量对0.96(K0.5Na0.5)(Nb1-xSbx)03-0.04Bi0.5Na0.5ZrO3无铅压电陶瓷结构与电性能的影响

李月明 洪璐 沈宗洋 王竹梅 洪燕

电子元件与材料2017,Vol.36Issue(7):23-27,5.
电子元件与材料2017,Vol.36Issue(7):23-27,5.DOI:10.14106/j.cnki.1001-2028.2017.07.004

Sb含量对0.96(K0.5Na0.5)(Nb1-xSbx)03-0.04Bi0.5Na0.5ZrO3无铅压电陶瓷结构与电性能的影响

Effect of Sb amount on structure and electrical properties of 0.96(K0.5Na0.5)(Nb1-xSbx)O3-0.04Bi0.5Na 0.5ZrO3 lead-free piezoelectric ceramics

李月明 1洪璐 1沈宗洋 1王竹梅 1洪燕1

作者信息

  • 1. 景德镇陶瓷大学材料科学与工程学院 中国轻工业功能陶瓷材料重点实验室,江西景德镇333403
  • 折叠

摘要

Abstract

0.96(K0.5Na0.5)(Nb1-xSbx)O3-0.04Bi0.5Na 0.5ZrO3 (0.96KNNSx-0.04BNZ,x=0,0.01,0.02,0.03,0.04,0.05)lead-free piezoelectric ceramics were prepared by a solid state reaction method.The effect of Sb amount on the crystal structure,mierostructure and electrical properties of the ceramics was investigated X-ray Diffraction results show that all the samples have a pure perovskite structure.With the increase of Sb amount,the phase structure of the samples translates from the coexistence of orthorhombic and tetragonal phases to tetragonal phases.A polymorphic phase transition (PPT) region existing in the presence of orthorhombic and tetragonal phases is found when x≤0.02.The ceramics with the composition of x=0.02 in the tetragonal side of the PPT region have optimal electrical properties as follows:the piezoelectric constant d33=354 pC/N,electromechanical coupling factor kp=43.6%,mechanical quality factor Qm=46,relative dielectric constant εr=2100,dielectric loss tanδ=2.6% and Curie temperature tc=290 ℃.

关键词

铌酸钾钠/无铅压电陶瓷/锆酸铋钠/压电性能/固相法/Sb掺杂

Key words

potassium sodium niobate/lead-free piezoelectric ceramics/bismuth sodium zirconate/piezoelectric properties/solid state method/Sb doping

分类

信息技术与安全科学

引用本文复制引用

李月明,洪璐,沈宗洋,王竹梅,洪燕..Sb含量对0.96(K0.5Na0.5)(Nb1-xSbx)03-0.04Bi0.5Na0.5ZrO3无铅压电陶瓷结构与电性能的影响[J].电子元件与材料,2017,36(7):23-27,5.

基金项目

国家自然科学基金资助项目(No.51262011,No.61671224) (No.51262011,No.61671224)

江西省自然科学基金资助项目(No.20151BAB206014) (No.20151BAB206014)

江西省教育厅科技落地计划资助项目(No.KJLD13076) (No.KJLD13076)

江西省青年科学家“井冈之星”培养对象计划资助项目(No.20142BCB23020) (No.20142BCB23020)

电子元件与材料

OA北大核心CSCDCSTPCD

1001-2028

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