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B4C还原法制备ZrB2及其高温导电性研究

陈志科 梁迪飞 邓龙江 孙东慧

电子元件与材料2017,Vol.36Issue(7):28-33,6.
电子元件与材料2017,Vol.36Issue(7):28-33,6.DOI:10.14106/j.cnki.1001-2028.2017.07.005

B4C还原法制备ZrB2及其高温导电性研究

Preparation of ZrB2 by reduction of B4C and its high temperature conductivity

陈志科 1梁迪飞 1邓龙江 1孙东慧1

作者信息

  • 1. 电子科技大学微电子与固体电子学院国家电磁辐射控制材料工程技术研究中心,四川成都610000
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摘要

Abstract

Several carbon/boron thermal reduction methods for the preparation of ZrB2 were briefly compared,in which,the B4C reduction method was simple,low cost,and easy to remove impurities.It can be easier to prepare pure ZrB2.The effects of different reaction molar ratios and different synthesis temperatures on the purity of ZrB2 were studied based on the B4C reduction method.The results indicate that,when the reaction molar ratio of B4C to ZrO2 is 0.77 and the synthesis temperature is 1700 ℃,the pure ZrB2 with almost no ZrO2 and B2O3 impurity can be obtained.Finally,the effect of different reaction molar ratios of ZrB2 on the high temperature conductivity was studied.According to the research,the conductivity increases with the increase of the purity of ZrB2.

关键词

ZrB2的合成/B4C还原法/高温电导率/无压烧结/高温隐身材料/超音速

Key words

synthesis of ZrB2/B4C reduction method/high temperature conductivity/pressureless sintering/high temperature stealth material/supersonic

分类

化学化工

引用本文复制引用

陈志科,梁迪飞,邓龙江,孙东慧..B4C还原法制备ZrB2及其高温导电性研究[J].电子元件与材料,2017,36(7):28-33,6.

电子元件与材料

OA北大核心CSCDCSTPCD

1001-2028

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