电子元件与材料2017，Vol.36Issue(9)：1-9,9.DOI:10.14106/j.cnki.1001-2028.2017.09.001
GaN基HEMTs器件热测试技术与应用进展
Progress of technologies and applications of temperature measurements for GaN-based HEMTs
摘要
Abstract
Temperature measurement methods of semiconductor devices are summarized in this paper.Particularly,four thermal testing technologies and the application of these methods in high-electron mobility gallium nitride (GaN)based high electron mobility transistor (HEMTs) devices are analyzed.The results show that the four technologies have their advantages and disadvantages.Although electronic method can only measure the average temperature of the junction area,it can directly measure the device temperature without damage to the package.The spatial resolution of infrared method is relatively low,but it can easily measure the device temperature distribution and both the static and dynamic measurement.Raman scattering technology has the advantage of high spatial resolution of about 1 μrn,but it requires point-by-point scanning and therefore suitable for local small-scale temperature measurement.Thermoreflectance imaging method not only possess high spatial resolution of sub-micron magnitude,but also can easily obtain device temperature profile,making it very suitable for GaN-based HEMTs device thermal test.It is pointed out that the thermoreflectance imaging method is likely to be the development direction of GaN-based HEMTs device thermal characteristics research.关键词
GaN/热测试/综述/电学法/红外辐射/拉曼散射/热反射Key words
GaN/temperature measurement/review/electrical/infrared radiation/Raman spectroscopy/thermoreflectance imaging分类
信息技术与安全科学引用本文复制引用
李汝冠,廖雪阳,尧彬,周斌,陈义强..GaN基HEMTs器件热测试技术与应用进展[J].电子元件与材料,2017,36(9):1-9,9.基金项目
广东省自然科学基金项目资助(No.2016A030310361 （）
No.2015A030310331) （）
技术基础科研项目资助(No.JSZL2016610B001) （No.JSZL2016610B001）
广东省自然科学杰出青年基金项目资助(No.2015A030306002) （No.2015A030306002）
广东特支计划科技创新青年拔尖人才项目资助(No.2015TQ01X030) （No.2015TQ01X030）
微波毫米波单片集成和模块电路重点实验室基金资助 （）
