电子元件与材料2017，Vol.36Issue(9)：26-29,4.DOI:10.14106/j.cnki.1001-2028.2017.09.006
晶体管阵列老炼时结温测量方法研究
Junction temperature measurement method study for transistor array under burn-in
吕贤亮 1麻力 1任翔 1孙明1
作者信息
- 1. 中国电子技术标准化研究院基础产品研究中心,北京100176
- 折叠
摘要
Abstract
According to PNP transistor array,two kinds of junction temperature measurement methods of matrix thermal resistance method and temperature sensitive parameter method (TSP) were analyzed and compared.The results show that the use of matrix thermal resistance method can consider the coupling effect of each chip.However,due to the complexity of the matrix thermal resistance test program,and the need of multiple conversions,it is easier to introduce errors.The temperature sensitive parameter method is simple and accurate,and can realize the junction temperature of the array tube in real time.关键词
晶体管阵列/老炼/结温/温度敏感参数/矩阵热阻/红外热像Key words
transistor array/bum-in/junction temperature/temperature sensitive parameter/matrix thermal resistance/IR thermal map分类
信息技术与安全科学引用本文复制引用
吕贤亮,麻力,任翔,孙明..晶体管阵列老炼时结温测量方法研究[J].电子元件与材料,2017,36(9):26-29,4.
