电子元件与材料2017，Vol.36Issue(10)：12-18,7.DOI:10.14106/j.cnki.1001-2028.2017.10.002
高压IGBT模块局部放电研究现状
Actuality of partial discharge in high voltage IGBT modules
王昭 1刘曜宁1
作者信息
- 1. 中车永济电机有限公司,陕西 西安 710018
- 折叠
摘要
Abstract
The IGBT (Insulated Gate Bipolar Transistor) modules have been developed for much higher voltage and current density, which leads to serious problems concerning the electrical insulation and partial discharge. The silicone gel and epoxy resin are usually used in the encapsulation of high voltage IGBT module to meet the capability of high electric filed, ensuring performances in the insulation and partial discharge. So far, many efforts have been done to optimize the electric field distribution inner the module. This paper mainly focus on the introductions of these solutions,which could improve the electric field distribution inner the module; Meanwhile, the perspectives are summarized for improving the reliability in partial discharge.关键词
IGBT模块/电气绝缘/综述/局部放电/高压/封装Key words
IGBT module/electrical insulation/review/partial discharge/high voltage/encapsulation分类
信息技术与安全科学引用本文复制引用
王昭,刘曜宁..高压IGBT模块局部放电研究现状[J].电子元件与材料,2017,36(10):12-18,7.
