电子元件与材料2017，Vol.36Issue(11)：12-15,4.DOI:10.14106/j.cnki.1001-2028.2017.11.002
Bi2O3掺杂对BLTN微波介质陶瓷性能影响研究
Effect of Bi2O3 doping on properties of BLTN microwave dielectric ceramics
摘要
Abstract
Ba3La2Ti2Nb2O15(BLTN)microwave dielectric ceramics were prepared by solid state reaction method through the processes of the mixing, ball milling, pre-sintering, molding and sintering. The effects of Bi2O3 doping amount on sintering behavior, microstructures and microwave dielectric properties of the BLTN ceramics were investigated. The results reveal that the incorporation of Bi2O3 can effectively reduce the sintering temperature, relative permittivity and quality factor of the BLTN ceramics are remarkably improved. When the Bi2O3 doping amount of Bi2O3 is 0.2% (mass fraction), the sintering temperature of BLTN ceramics is reduced from 1440℃ to 1360℃, and the optimal microwave dielectric properties are obtained:εr=55,Q·f=13500 GHz(4.71 GHz),τf= –2.35×10–6℃–1.关键词
BLTN/微波介质陶瓷/Bi2O3/掺杂/烧结行为/介电性能Key words
BLTN/microwave dielectric ceramics/Bi2O3/doping/sintering behavior/dielectric properties分类
信息技术与安全科学引用本文复制引用
刘卓,庞新峰,郭海,李勃..Bi2O3掺杂对BLTN微波介质陶瓷性能影响研究[J].电子元件与材料,2017,36(11):12-15,4.基金项目
深圳市科技研发计划项目资助(No.JCYJ20150827165038323 （）
No.JCYJ20160301154309393) （）
国家重点研发计划项目资助(No.2017YFB0406300) （No.2017YFB0406300）
