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成型压力对CuFeO2陶瓷材料结构和介电性能的影响

谢新宇 代海洋 陈镇平 叶凤娇 谷留停 刘树人

电子元件与材料2017,Vol.36Issue(12):16-20,5.
电子元件与材料2017,Vol.36Issue(12):16-20,5.DOI:10.14106/j.cnki.1001-2028.2017.12.004

成型压力对CuFeO2陶瓷材料结构和介电性能的影响

Effect of forming pressure onstructureand dielectric properties of CuFeO2 ceramics

谢新宇 1代海洋 1陈镇平 1叶凤娇 1谷留停 1刘树人1

作者信息

  • 1. 郑州轻工业学院 物理与电子工程学院,河南 郑州 450002
  • 折叠

摘要

Abstract

CuFeO2ceramics were synthesized by the traditional solid-state reaction method with different forming pressures(10-800MPa). The effects of forming pressure on the crystal structure,micromorphologyanddielectric properties of CuFeO2ceramics were investigatedbyX-ray diffraction (XRD), scanning electron microscopy(SEM) and impedance analyzer. Theexperimentalresults indicate that no phase transitionis observed for all samples, while the micromorphologyisobviouslyinfluenced by theforming pressure.The largest grain sizeandtheclear grain boundaries areobservedin thesampleformed at100MPa.The electric propertiesmeasurementssuggestthat thefrequency stability of permittivityofthe samplescanbe enhancedby properly increasingformingpressure. Thehigher dielectric constant and lower dielectric loss in the sample formed at100 MPa show the improveddielectric properties. The relationship betweenmicrostructureand dielectric properties of CuFeO2sampleswas also discussed.

关键词

CuFeO2陶瓷/成型压力/晶体结构/微观形貌/介电常数/介电损耗

Key words

CuFeO2ceramics/forming pressures/crystal structure/micromorphology/dielectric constant/dielectric loss

分类

信息技术与安全科学

引用本文复制引用

谢新宇,代海洋,陈镇平,叶凤娇,谷留停,刘树人..成型压力对CuFeO2陶瓷材料结构和介电性能的影响[J].电子元件与材料,2017,36(12):16-20,5.

基金项目

国家自然科学基金资助项目(No. 11675149) (No. 11675149)

电子元件与材料

OA北大核心CSCDCSTPCD

1001-2028

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