电子元件与材料2018，Vol.37Issue(6)：49-52,4.DOI:10.14106/j.cnki.1001-2028.2018.06.010
基于TSV技术的3D电感的设计与实现
Design and implementation of 3D inductors based on TSV technology
薛宇 1张洪泽 1刘鹏飞 1朱健1
作者信息
- 1. 南京电子器件研究所, 江苏 南京 210016
- 折叠
摘要
Abstract
With the increasing integration of integrated circuits, traditional 2D on-chip inductors have defects such as high loss and large footprint, which can not meet the requirements of 3D integration. Therefore, a novel spiral 3D inductor based on though silicon via ( TSV) technology was proposed. Firstly, the structure of the novel inductor was introduced, and the loss mechanism was analyzed. Secondly, the feasibility of the 3D inductor based on TSV was studied through simulation data. Finally, the physical ob-ject was produced and tested. The test results show that the highest quality factor of 3D inductor based on TSV reaches about 25 at 2. 55 GHz, the inductance can be stabilized at about 4 nH within 3 GHz, and the self-resonant frequency is about 6 GHz. The goal of high Q value and low footprint is achieved.关键词
硅通孔/电感/三维集成/微系统/无源集成器件/三维集成电路Key words
TSV/inductor/3D integration/microsystems/integrated passive device/3D ICs分类
数理科学引用本文复制引用
薛宇,张洪泽,刘鹏飞,朱健..基于TSV技术的3D电感的设计与实现[J].电子元件与材料,2018,37(6):49-52,4.
