电子元件与材料2018，Vol.37Issue(6)：57-62,6.DOI:10.14106/j.cnki.1001-2028.2018.06.012
动态耐压下SOI RESURF器件的二维电场解析模型
Two - dimensional electric field analytical model of SOI RESURF devices under dynamic voltage
摘要
Abstract
During the design of the SOI ( silicon-on-insulator) device, in order to make it have a higher voltage level, the RESURF effect of the device should be optimized. However, due to the dynamic voltage of the SOI RESURF device during the actu-al circuit operation, the deep depletion effect of the substrate will cause the substrate depletion region to appear and the RESURF effect of the device will be changed. As a result, the device voltage-withstand performance will be changed. So, a two-dimensional elec-tric field analytical model for SOI ( silicon-on-insulator) RESURF devices under dynamic voltage was proposed. A new surface elec-tric field distribution expression was obtained based on the corresponding two-dimensional Poisson equation solution. According to this model, the breakdown characteristics under dynamic voltage was analyzed and the physical mechanism to improve the RESURF effect of the device under dynamic voltage was described. Simultaneously, to improve the practicality of the SOI RESURF device, the substrate doping concentration was optimized based on the new surface electric field distribution expression. Finally, simulation a-nalysis verified the correctness of the proposed model.关键词
SOI/半导体器件/表面电场/数值仿真/二维模型/击穿特性Key words
SOI/semiconductor device/surface electric field/numerical simulation/two-dimensional model/breakdown char-acteristics分类
信息技术与安全科学引用本文复制引用
雍明阳,阳小明,李天倩,韩旭..动态耐压下SOI RESURF器件的二维电场解析模型[J].电子元件与材料,2018,37(6):57-62,6.基金项目
教育部春晖计划(Z2016147) （Z2016147）
四川省电力电子节能技术与装备重点实验室开放课题资助(szjj2017-051) （szjj2017-051）
西华大学研究生创新基金(ycjj2017064) （ycjj2017064）
