电子与封装2024，Vol.24Issue(1)：35-39,5.DOI:10.16257/j.cnki.1681-1070.2024.0004
端口双向耐高压电路的ESD防护设计技术
ESD Protection Design Technology for Port Bidirectional High Voltage Resistant Circuits
邹文英 1李晓蓉 1杨沛 1周昕杰 1高国平1
作者信息
- 1. 中科芯集成电路有限公司,江苏无锡 214072
- 折叠
摘要
Abstract
With the rapid development of CMOS process,integrated circuits with multiple power domain are becoming more and more common,and the circuit full-chip ESD design is becoming more and more complex.An ESD design technology for a 32-channel radiation-resistant bus interface circuit based on a 0.35 μm CMOS process is presented.Meanwhile,the ESD reinforcement design of the bidirectional high voltage resistant input pins improves the ESD resistance of the chip.The radiation-resistant 32-bus interface circuit passes the 4.0 kV ESD test of human body model,and the results verify the effectiveness of the design.关键词
双向耐高压/人体模型/多电源域/全芯片ESDKey words
bidirectional high voltage resistant/human body model/multiple power domain/full-chip ESD分类
信息技术与安全科学引用本文复制引用
邹文英,李晓蓉,杨沛,周昕杰,高国平..端口双向耐高压电路的ESD防护设计技术[J].电子与封装,2024,24(1):35-39,5.
