电子与封装2024，Vol.24Issue(1)：40-44,5.DOI:10.16257/j.cnki.1681-1070.2024.0009
基于Innovus的局部高密度布局规避方法
Local High-Density Layout Circumvention Method Based on Innovus
李应利 1王淑芬1
作者信息
- 1. 中国电子科技集团公司第五十八研究所,江苏无锡 214035
- 折叠
摘要
Abstract
Standard cell layout is one of the important aspects of digital IC backend design,and high standard cell density affects the tool routing and timing optimization.Using UMC 28 nm process,two methods based on Innovus are used to solve the problem that the hold violation cannot be fixed automatically by the tool due to local high-density standard cells,and the timing optimization is achieved while the dynamic IR Drop is reduced.The results show that setting setPlaceMode-place_global_max_density value in the PreCTS stage is more effective for subsequent timing optimization,and the dynamic IR Drop is reduced by 8.85％.关键词
数字后端设计/Innovus/局部高密度标准单元/时序优化Key words
digital backend design/Innovus/local high-density standard cells/timing optimization分类
信息技术与安全科学引用本文复制引用
李应利,王淑芬..基于Innovus的局部高密度布局规避方法[J].电子与封装,2024,24(1):40-44,5.
