电子与封装2024，Vol.24Issue(1)：45-50,6.DOI:10.16257/j.cnki.1681-1070.2024.0002
碳纳米管场效应晶体管重离子单粒子效应研究
Study on Single Event Effect of Heavy Ion in Carbon Nanotube Filed Effect Transistors
翟培卓 1王印权 1徐何军 1郑若成 1朱少立1
作者信息
- 1. 中国电子科技集团公司第五十八研究所,江苏无锡 214035
- 折叠
摘要
Abstract
Carbon nanotube filed effect transistors(CNT FETs)have the advantages of excellent electrical performance and stable chemical structure,and exhibit strong tolerance to harsh environments,but their radiation resistance performance still lacks sufficient experimental verification.The single event effect(SEE)induced by 209Bi heavy ion radiation in CNT FETs with ultra-thin CNT as the channel material and HfO2 as the gate dielectric layer is studied.The results show that under the condition of heavy ion radiation,the single event transient currents of the gate are mostly in the order of 10-11 A,and a few are up to the order of 10-10 A.Because of the nanoscale ultra-thin CNT channel,the drain current of CNT FETs is not sensitive to the single event radiation.The single event transient current of the drain can be almost ignored,and no single event burnout(SEB)is found.Due to the HfO2 gate dielectric layer,no single event gate rupture(SEGR)is found in CNT FETs,and CNT FETs exhibit strong single event resistance.关键词
碳纳米管/场效应管/重离子/单粒子效应Key words
carbon nanotube/filed effect transistors/heavy ion/single event effect分类
信息技术与安全科学引用本文复制引用
翟培卓,王印权,徐何军,郑若成,朱少立..碳纳米管场效应晶体管重离子单粒子效应研究[J].电子与封装,2024,24(1):45-50,6.
