电子与封装2024，Vol.24Issue(1)：51-55,5.DOI:10.16257/j.cnki.1681-1070.2024.0005
ASM E2000硅外延片异常背圈现象研究与分析
Research and Analysis of Abnormal Back-Ring Phenomena in ASM E2000 Silicon Epitaxial Wafers
徐卫东 1肖健 1何晶 1袁夫通1
作者信息
- 1. 南京国盛电子有限公司,南京 211111
- 折叠
摘要
Abstract
During the production of silicon epitaxial wafers in the ASM E2000 epitaxial furnace,abnormal back-ring phenomena sometimes appear on the backside of wafers,including abnormal back-ring size,abnormal back-ring shape,and back-ring eccentricity.It is found that back-ring phenomena only occurs on wafers with non-silicon dioxide back seals.For the generation of abnormal back-ring,experimental verification of relevant parameters such as slide,airflow,temperature and time is carried out to obtain the reasons for the formation of back-ring and the reasons for the generation of abnormal back-ring.Wafers will form the back-ring after baking at 900 ℃ for 60 s,which is a normal phenomenon in the epitaxial process,but the irregular back-ring is usually accompanied by the synchronization deterioration of other epitaxial process parameters.The abnormal back-ring can be solved by adjusting the process parameters,equipment slips,skips,and the replacement of graphite parts.关键词
硅外延缺陷/背圈/晶圆背圈/ASM E2000外延炉Key words
silicon epitaxial defects/back-ring/wafer back-ring/ASM E2000 epitaxial furnace分类
信息技术与安全科学引用本文复制引用
徐卫东,肖健,何晶,袁夫通..ASM E2000硅外延片异常背圈现象研究与分析[J].电子与封装,2024,24(1):51-55,5.
