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GaN薄膜的太赫兹光谱响应研究

韩烨 王党会 许天旱

电子与封装2024,Vol.24Issue(1):56-60,5.
电子与封装2024,Vol.24Issue(1):56-60,5.DOI:10.16257/j.cnki.1681-1070.2024.0007

GaN薄膜的太赫兹光谱响应研究

Terahertz Spectral Response Study of GaN Thin Films

韩烨 1王党会 1许天旱1

作者信息

  • 1. 西安石油大学新能源学院,西安 710065
  • 折叠

摘要

Abstract

At present,terahertz time-domain spectroscopy(THz-TDS)has become an effective tool to investigate the optical parameters and dispersion relationships of solids.The absorption spectra,dielectric constants,refractive indices and dielectric losses of GaN thin films with fibrillar zincite structure in the range of 0-8.0 THz are investigated using terahertz time-domain spectroscopy.The results show that the terahertz response with a frequency of 4.65 THz is dominated by the E2(low)phonon mode of GaN,and the obtained low-frequency dielectric constant of 8.9 and high-frequency dielectric constant of 6.0 are close to the theoretical values.The terahertz dielectric constant response spectra with frequencies between 4.24 THz and 4.40 THz are further investigated.The obtained center vibration frequencies of the GaN films are consistent with the terahertz absorption spectra,and the value of the dielectric loss is very small and tends to be close to 0 gradually,indicating that GaN has good dielectric properties.The conclusions drawn expand the application of GaN-based electronic components in the THz band and are useful for further research on the quality and reliability of GaN-based electronic components in the THz band.

关键词

太赫兹时域光谱/GaN薄膜/光学性质

Key words

terahertz time-domain spectroscopy/GaN thin films/optical properties

分类

信息技术与安全科学

引用本文复制引用

韩烨,王党会,许天旱..GaN薄膜的太赫兹光谱响应研究[J].电子与封装,2024,24(1):56-60,5.

电子与封装

1681-1070

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