电子与封装2024，Vol.24Issue(1)：61-67,7.DOI:10.16257/j.cnki.1681-1070.2024.0010
GaN器件辐照效应与LDO电路的单粒子敏感点协同设计研究
Collaborative Design Study of the Irradiation Effect of GaN Devices and the Single Event Irradiation Sensitive Point of LDO Circuits
摘要
Abstract
Single event irradiation and modeling of p-gate GaN devices are innovatively carried out.The extracted single event excitation current is used into the single event design of a full GaN low dropout regulator(LDO)voltage stabilizing circuit,and a single event sensitive node of the circuit is obtained.The single event transient(SET)responses of the node corresponding to the heavy load state and the light load state are 500 mV/60 ns and 1 210 mV/60 ns respectively.The above study establishes a T-CAD/SPICE single event effect collaborative design method for GaN devices and all GaN based circuits.关键词
GaN辐照效应/GaNLDO/抗辐照加固/p型栅GaN器件Key words
GaN irradiation effect/GaN LDO/radiation hardening/p-gate GaN device分类
信息技术与安全科学引用本文复制引用
朱峻岩,张优,王鹏,黄伟,张卫,邱一武,周昕杰..GaN器件辐照效应与LDO电路的单粒子敏感点协同设计研究[J].电子与封装,2024,24(1):61-67,7.基金项目
国家自然科学基金(6202780115) （6202780115）
