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红外发光二极管对固体继电器漏电流的影响

李建华 闫军政 宋伟 洪浩

电子与封装2024,Vol.24Issue(1):68-72,5.
电子与封装2024,Vol.24Issue(1):68-72,5.DOI:10.16257/j.cnki.1681-1070.2024.0013

红外发光二极管对固体继电器漏电流的影响

Influence of Infrared Light Emitting Diode on the Leakage Current of Solid State Relays

李建华 1闫军政 1宋伟 1洪浩1

作者信息

  • 1. 贵州振华群英电器有限公司,贵阳 550018
  • 折叠

摘要

Abstract

Solid state relays are increasingly used in the military and civilian markets,replacing traditional electromagnetic relays in large quantities.The isolation of solid state relays has changed from transformer isolation to optical isolation.Optical isolation solid state relays have become the mainstream design of many manufacturers.Optical isolated solid state relays are used in large numbers,but when using light emitting devices such as infrared light emitting diodes,if the wavelength of infrared light emitting diodes selected does not match the bandgap width of semiconductor devices such as field effect transistors,improper handling will result in the output leakage currents of the solid state relays being exceeded.The influence of infrared light emitting diodes on the output leakage current of solid state relays is analyzed through photoelectric effect,the mechanism of this influence is verified through experimental tests,and an improvement method is proposed.

关键词

发光二极管/场效应管/禁带宽度/固体继电器/光电效应

Key words

light emitting diode/field effect transistor/bandgap width/solid state relays/photoelectric effect

分类

信息技术与安全科学

引用本文复制引用

李建华,闫军政,宋伟,洪浩..红外发光二极管对固体继电器漏电流的影响[J].电子与封装,2024,24(1):68-72,5.

电子与封装

1681-1070

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