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首页|期刊导航|纳微快报(英文)|Recent Advances in Patterning Strategies for Full-Color Perovskite Light-Emitting Diodes

Recent Advances in Patterning Strategies for Full-Color Perovskite Light-Emitting DiodesOACSTPCD

Recent Advances in Patterning Strategies for Full-Color Perovskite Light-Emitting Diodes

英文摘要

Metal halide perovskites have emerged as promising light-emitting materials for next-generation displays owing to their remarkable material character-istics including broad color tunability,pure color emission with remarkably narrow bandwidths,high quantum yield,and solution processability.Despite recent advances have pushed the luminance efficiency of monochromic perovskite light-emitting diodes(PeLEDs)to their theoretical limits,their current fabrication using the spin-coating process poses limitations for fabrication of full-color displays.To integrate PeLEDs into full-color display panels,it is crucial to pattern red-green-blue(RGB)perovskite pixels,while mitigating issues such as cross-contamination and reductions in luminous efficiency.Herein,we present state-of-the-art patterning technologies for the development of full-color PeLEDs.First,we highlight recent advances in the development of efficient PeLEDs.Second,we discuss various patterning techniques of MPHs(i.e.,photolithography,inkjet printing,electron beam lithography and laser-assisted lithography,electrohydrodynamic jet printing,thermal evaporation,and transfer printing)for fabrication of RGB pixelated displays.These patterning techniques can be classified into two distinct approaches:in situ crystallization patterning using perovskite precursors and patterning of colloidal perovskite nanocrystals.This review highlights advancements and limitations in patterning techniques for PeLEDs,paving the way for integrating PeLEDs into full-color panels.

Gwang Heon Lee;Kiwook Kim;Yunho Kim;Jiwoong Yang;Moon Kee Choi

Graduate School of Semiconductor Materials and Devices Engineering,Center for Future Semiconductor Technology(FUST),Ulsan National Institute of Science and Technology(UNIST),Ulsan 44919,Republic of KoreaDepartment of Energy Science and Engineering,Daegu Gyeongbuk Institute of Science and Technology(DGIST),Daegu 42988,Republic of KoreaDepartment of Energy Science and Engineering,Daegu Gyeongbuk Institute of Science and Technology(DGIST),Daegu 42988,Republic of Korea||Energy Science and Engineering Research Center,Daegu Gyeongbuk Institute of Science and Technology(DGIST),Daegu 42988,Republic of KoreaGraduate School of Semiconductor Materials and Devices Engineering,Center for Future Semiconductor Technology(FUST),Ulsan National Institute of Science and Technology(UNIST),Ulsan 44919,Republic of Korea||Department of Materials Science and Engineering,Ulsan National Institute of Science and Technology(UNIST),Ulsan 44919,Republic of Korea||Center for Nanoparticle Research,Institute for Basic Science(IBS),Seoul 08826,Republic of Korea

PerovskiteLight-emitting diodeFull-color displayHigh-resolution patterningElectroluminescence

《纳微快报(英文)》 2024 (003)

99-137 / 39

This work was supported by the National Research Foundation of Korea(NRF)grant funded by the Korean government(MSIT)(Grant No.2021R1C1C1007997).Open access funding provided by Shanghai Jiao Tong University.

10.1007/s40820-023-01254-8

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