湿法刻蚀条件对TFT中Cu电极坡度角和均一性的影响及工艺参数优化OACSTPCD

In the gate etching process of high generation thin film transistor(TFT)production line,the effect of cleaning power,cleaning time and etching time of atmosphere pressure plasma(APP)on etching performance(critical dimensional Bias,etching uniformity,profile angle)should be identified and the optimal process conditions should be obtained to improve the yield. With APP cleaning power(7,9,11 kV),cleaning time(5 400,5 700,6 000 r/min)and etching time(85,95,105 s)as the affecting factors(i.e.,independent variables)and critical dimensional deviation(CD Bias),etching uniformity,and profile angle as dependent variables,a three-factor with three-level orthogonal experiment was conducted by an L9(34)-type orthogonal table(a total of nine experiments)to clarify the order of importance of factor effects.Then,the formation of profile angle and etching uniformity change of Cu electrode were analyzed in conjunction with the wet etching process,and the hypothesis that the formation of reflux flow path of Cu etchant affected the profile angle and etching uniformity was proposed.Meanwhile,different etching time experiments(75,85,95 s)were set up to verify the proposed ideas.Finally,regression analysis was performed on the orthogonal experimental results to obtain the etching performance(CD Bias,profile angle,etching uniformity)as a function of etching time. The results show that the etching time has the greatest effect on the etching performance,and the APP cleaning time and power have less effect.With the increase of etching time,the critical dimension Bias(CD Bias)increases,the uniformity becomes worse,and the profile angle becomes larger.Therefore,the etching time should be shortened to improve the etching uniformity and smooth the profile angle.The recommended optimal process combination is:etching time of 85 s,APP voltage of 9 kV,and APP transfer speed of 5 400 r/min.Validation experiments with different etching times show that the degree of etching increases simultaneously with increasing etching time,but the degree of etching at the bottom of the electrode is higher than that at the top,so profile angle of the electrode increases.The hypothesis of Cu etchant reflux path is confirmed.A scheme to improve etching uniformity and smooth the profile angle by increasing the exposure dose and development time while decreasing the etching time is proposed.CD Bias and etching uniformity all maintain a quadratic function with etching time,and the profile angle and etching time then remain linear functions. As the etching time increases,the Cu film layer not covered by photoresist is completely etched in the thickness direction,forming a step,which makes the Cu etchant form a reflux path.Along the reflux path,the etchant concentration and temperature gradually decrease,so the etching uniformity deteriorates.In addition,along the reflux path,the etchant contacts the bottom and top of the electrode in turn,and the bottom etching degree is large,so the profile angle increases.The equation of etching performance as a function of etching time obtained by regression analysis provides a basis for predicting etching effect and optimizing etching time.The results of this research can provide a reference for the optimization of production line parameters and yield improvement.