电子元件与材料2023，Vol.42Issue(11)：1302-1307,6.DOI:10.14106/j.cnki.1001-2028.2023.0077
Sm2+掺杂AlN纳米线的制备、光致发光及磁性分析
Preparation,photoluminescence and magnetic analysis of Sm2+ doped AlN nanowires
摘要
Abstract
The Sm2+ doped AlN nanowires were successfully prepared by the direct reaction of Al and Sm2O3 mixed powders with nitrogen using the direct current arc discharge method.The composition and morphology of nanowires were analyzed by X-ray diffraction(XRD),Raman spectroscopy(Raman),X-ray photoelectron spectroscopy(XPS),energy dispersive spectroscopy(EDS),scanning electron microscopy(SEM)and transmission electron microscopy(TEM).The results show that the diameter of the nanowires is approximately 50-200 nm,and Sm2+ ions are successfully incorporated into the AlN lattice without altering the AlN lattice structure.Sm2+ doped AlN nanowire exhibits distinct emission peaks corresponding to 4f electron transitions of Sm2+ ions and room temperature ferromagnetism,indicating Sm2+ doped AlN nanowires have potential applications in optoelectronic and spintronic micro/nano devices.关键词
氮化铝/掺杂/光致发光/室温铁磁性/直流电弧Key words
AlN/doping/photoluminescence/room temperature ferromagnetism/DC arc discharge分类
物理学引用本文复制引用
杨莉,张玲,王秋实..Sm2+掺杂AlN纳米线的制备、光致发光及磁性分析[J].电子元件与材料,2023,42(11):1302-1307,6.基金项目
辽宁省教育厅科学研究项目(LJ2020009) （LJ2020009）
