电子元件与材料2023，Vol.42Issue(11)：1324-1328,5.DOI:10.14106/j.cnki.1001-2028.2023.0099
具有多段分裂栅的屏蔽栅沟槽型MOSFET特性研究
Study on characteristics of shielded gate trench MOSFET with multi-segment split gate
摘要
Abstract
Here a shielded gate trench(SGT)MOSFET structure was proposed with multi-segment split gate to effectively modulate the electric field distribution in the blocking state,to improve the charge coupling effect,and to better compromise the relationship between the breakdown voltage(BV)and the characteristic on-resistance(Ron,sp)of the device.The traditional SGT MOSFET has three parts.The upper shield gate is connected to electrode,and the middle and lower shield gates are floating,which are named UFG and LFG respectively.The new structure introduces two additional electric field peaks in n-type drift region in the blocking state to achieve more uniform electric field distribution.Simulation results from Sentaurus TCAD software show that under the same cell parameters the BV and figure of merit(FOM)of MOSFET with dual-segment floating gate(DSFSGT)are increased by 37.7% and 66.7% from traditional SGT MOSFET,respectively.The BV and FOM can reach up to 173.6 V and 177.3 V2/(mΩ·mm2),respectively.Compared with single-segment floating gate(SFSGT)MOSFET,the BV and FOM are improved by 10.7% and 19.8% respectively.关键词
分裂栅/电场分布/MOSFET/SGT/击穿电压Key words
split gate/electric field distribution/MOSFET/SGT/breakdown voltage分类
信息技术与安全科学引用本文复制引用
李嘉楠,冯全源,陈晓培..具有多段分裂栅的屏蔽栅沟槽型MOSFET特性研究[J].电子元件与材料,2023,42(11):1324-1328,5.基金项目
国家自然科学基金(62090012) （62090012）
四川省重点研发项目(2023YFG0004) （2023YFG0004）
