电子元件与材料2023，Vol.42Issue(11)：1370-1376,7.DOI:10.14106/j.cnki.1001-2028.2023.0324
工艺参数对阻挡层CMP后互连线厚度一致性的影响
Effects of process parameters on thickness uniformity of chemical mechanical polished barrier layer for copper interconnect
摘要
Abstract
In order to effectively control the interconnect thickness(THK)of the copper interconnection barrier layer chemical mechanical polishing(CMP)and optimize its uniformity,the effects of the polishing fluid flow rate,edge pressure and polishing time on the removal rate of copper(Cu),oxide(TEOS)and interconnect thickness uniformity of CMP of online wafer were studied.CMP of barrier material was carried out in a weakly alkaline slurry without oxidant(H2O2)and inhibitor(BTA).The experimental results show that with polishing fluid flow rate of 250 mL/min,edge pressure P1/P2/P3/P4/P5 of 33.37/13.72/13.24/12.55/11.58 kPa,and polishing time of 40 s+20 s,THK is 224.9 nm,With-In Wafer Non-Uniformity is 0.92%,Range is 7.82 nm.Based on the experimental results,it is also found that the surface morphology of copper under splitting process is better,the surface roughness is 1.71 nm,which is of great significance to improve the flatness and reliability of CMP.关键词
铜互连/阻挡层/工艺参数/互连线厚度/去除速率Key words
copper interconnection/barrier layer/process parameters/interconnect thickness/removal rate分类
矿业与冶金引用本文复制引用
王海英,王辰伟,刘玉岭,赵红东..工艺参数对阻挡层CMP后互连线厚度一致性的影响[J].电子元件与材料,2023,42(11):1370-1376,7.基金项目
国家自然科学基金(62074049) （62074049）
天津市科技计划项目(21YDTPJC00050) （21YDTPJC00050）
光电信息控制和安全技术重点实验室基金(2021JCJQLB055008) （2021JCJQLB055008）
