电子元件与材料2023，Vol.42Issue(11)：1396-1401,6.DOI:10.14106/j.cnki.1001-2028.2023.1770
一种应用于EEPROM的快速升压电荷泵设计
A design of a fast-boost charge pump for EEPROM
摘要
Abstract
A fast-boost on-chip charge pump was designed.Here the voltage boost speed of a charge pump is one of the critical parameters for high voltage erasing and programming of the EEPROM memory unit.It is found that it can improve the boost speed and output voltage of the charge pump by using NPN transistor instead of NMOS transistor to form the voltage multiplier circuit in the traditional Dickson charge pump.The NPN transistors can be fabricated by triple well CMOS process,which can avoid the complex BiCMOS processes.A charge pump system was designed using 0.18 μm triple well CMOS process,including a clock generator circuit and a 12-level Dickson charge pump based upon NPN transistors.The clock generator circuit produce a two-phase non-overlap clock signal to drive the charge pump to avoid reverse flow of charge between pump capacitances.Pre-charged transistors were added to further improve the boost speed.Simulation shows that,under 5 V power supply voltage,the output voltage of the charge pump can reach 16 V within 2.06 μs,which is 2.51 μs faster than the traditional 12-level Dickson charge pump.The design realizes the purpose of fast-boost speed of the charge pump.关键词
电荷泵/NPN晶体管/快速升压/三阱CMOS工艺/EEPROMKey words
charge pump/NPN transistor/fast-boost/tripe well CMOS process/EEPROM分类
电子信息工程引用本文复制引用
洪国华,卓启越,葛优,邹望辉..一种应用于EEPROM的快速升压电荷泵设计[J].电子元件与材料,2023,42(11):1396-1401,6.基金项目
湖南省自然科学基金(2020JJ4627) （2020JJ4627）
