人工晶体学报2024，Vol.53Issue(1)：82-89,8.
退火温度对BCZT外延薄膜电学性能的影响及其导电机制分析
Effect of Annealing Temperature on Electrical Properties of BCZT Epitaxial Films and Its Conductivity Mechanism
摘要
Abstract
The pulsed laser deposition(PLD)technique for the preparation of Ba0.85Ca0.15Zr0.1Ti0.9O3(BCZT)epitaxial films usually requires high deposition temperature and is prone to contain oxygen vacancy defects.In order to provide a post-annealing treatment process based on PLD,high-quality BCZT epitaxial films were successfully prepared on conductive substrates,and the effects of annealing temperature on the structure and properties of BCZT epitaxial films were investigated.The films annealed at different temperatures of 750,800,850 and 900 ℃ show pure phases.The ferroelectric properties of the films are gradually improved as the annealing temperature increase,with 2Pr increasing from 4.2 to 17.6 μC/cm2.However,the sample at the annealing temperature of 900 ℃ has the most serious leakage current problem.By fitting the J-E relationship,it is found that the films annealed from 700 ℃ to 850 ℃ follow the Ohmic conduction mechanism at low fields,while the samples annealed at 900 ℃ follow the space charge limited current mechanism,and all the films follow the Fowler-Nordheim tunneling mechanism at high fields.关键词
脉冲激光沉积/Ba0.85Ca0.15Zr0.1Ti0.9O3外延薄膜/退火温度/物相结构/电学性能/导电机制Key words
pulsed laser deposition/Ba0.85Ca0.15Zr0.1Ti0.9O3 epitaxial film/annealing temperature/phase structure/electrical property/conductivity mechanism分类
数理科学引用本文复制引用
彭倩文,吉祥..退火温度对BCZT外延薄膜电学性能的影响及其导电机制分析[J].人工晶体学报,2024,53(1):82-89,8.基金项目
化学与精细化工广东省实验室潮州分中心公开引进科研团队资助(HJI202202A005) （HJI202202A005）
材料复合新技术国家重点实验室(武汉理工大学)开放基金(2022-KF-33) （武汉理工大学）
