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首页|期刊导航|中国光学(中英文)|可用于近紫外LED芯片的铕-铱双金属配合物红光共聚荧光粉

可用于近紫外LED芯片的铕-铱双金属配合物红光共聚荧光粉OACSTPCD

A red-emitting copolymer phosphors based on bimetallic Eu-Ir complex for Near-UV chip-based LEDs

中文摘要英文摘要

本研究以Ir配合物FIrPic作为Eu离子的配体,合成了一种新的Eu-Ir双金属配合物Eu(FIrPic)2(Phen)UA,并通过自由基聚合成功制备了红色发光荧光共聚物PM-Eu-Ir,适用于商用近紫外芯片型LED.在不影响Eu3+离子的荧光发射特性的前提下,加入Ir-配合物可以有效地敏化Eu3+离子,增强其对 400 nm紫外光的吸收.在 365 nm紫外光激发下,共聚物PM-Eu-Ir在 612 nm处显示出最强的发射峰,其CIE坐标为(0.461,0.254),这与 365 nm近紫外芯片非常吻合.红色共聚荧光粉PM-Eu-Ir的微观形貌为典型的多层空间网络结构,除了表现出明显的红光发射和 634.54 μs 的荧光寿命外,还在 25~250℃的宽温范围内具有优异的热稳定性.使用共聚物PM-Eu-Ir制作的LED发出的红光亮度为149800 cd/m2.研究结果表明,所制备的共聚荧光粉可作为红光元件用于制造近紫外芯片白光LED.

In this paper,a new Eu-Ir bimetallic complex Eu(FIrPic)2(Phen)UA is synthesized using the Ir complex FIrPic as ligands for Eu ions and red-emitting phosphorescent copolymer PM-Eu-Ir is successfully prepared via radical polymerization for commercial near UV chip-based LEDs.The Eu3+ ions were found to be effectively sensitizable by adding Ir-complex with enhanced ultra-violet light absorption at around 400 nm without affecting the fluorescence emission characteristic of the Eu3+ ions.The proposed copolymer PM-Eu-Ir exhibits the strongest emission peak at 612 nm with the CIE coordinates(0.461,0.254)under 365 nm ultra-violet light excitation,which matches well with the 365 nm near-UV chip.The micro-morphology of the red copolymer phosphor PM-Eu-Ir is a typical multilayer spatial network structure;as well as having appreciable red emission and the corresponding fluorescence lifetime of 634.54 μs,it also has excellent thermal stability in a wide range of 25~250℃.The LEDs fabricated by the copolymer PM-Eu-Ir display red light emission with a 149800 cd/m2 luminance.The results support the potential utilization of prepared copolymer phos-phor as a red component in the fabrication of near UV chip-based white LEDs.

王子豪;杨亚敏;张爱琴;贾虎生;贾静

太原理工大学材料与科学与工程学院,太原 030024太原理工大学轻纺工程学院,太原 030006太原理工大学航空航天学院,太原 030006

化学工程

稀土发光离子双金属配合物共聚型高分子荧光粉近紫外LED

rare-earth luminescent ionsbimetallic complexescopolymer phosphorsNUV LED chips

《中国光学(中英文)》 2024 (002)

高性能GaAs基VESCEL外延材料中异质界面成分?结构调控

468-480 / 13

国家自然科学基金(No.21972103);山西浙江大学新材料与化工研究院研发项目(No.2021SX-AT010)Supported by National Natural Science Foundation of China(No.21972103);Research and Development Project of New Materials and Chemical Engineering Research Institute of Shanxi Zhejiang University(No.2021SX-AT010)

10.37188/CO.EN-2023-0023

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