集成电路与嵌入式系统2024，Vol.24Issue(3)：13-18,6.
NLDMOS器件单粒子效应及Nbuffer加固
Single-event effect and Nbuffer hardening for NLDMOS device
杨强 1葛超洋 1李燕妃 1谢儒彬 1洪根深1
作者信息
- 1. 中国电子科技集团公司第五十八研究所,无锡 214000
- 折叠
摘要
Abstract
A single-event burnout(SEB)hardened design based on N-type lateral double-diffused metal-oxide-silicon(NLDMOS)devices with a Nbuffer layer is proposed in this paper.The electrical and single-event characteristics of NLDMOS is verified by TCAD simula-tion.Without changing the device performance,the 18 V NLDMOS SEB trigger voltage increases from 22 V to 32 V,reaching the theo-retical maximum,which is the avalanche breakdown voltage of the device.The NLDMOS device with an Nbuffer structure can suppress the peak electric field transfer when the parasitic bipolar transistor is turned on due to single paricle incident,and avoid avalanche break-down of the device causing SEB.Furthermore,Nbuffer is also suitable for SEB hardening of 18～60 V NLDMOS.关键词
LDMOS/单粒子烧毁/Nbuffer/抗辐射加固/TCADKey words
LDMOS/single-event burnout/Nbuffer/radiation hardening/TCAD分类
信息技术与安全科学引用本文复制引用
杨强,葛超洋,李燕妃,谢儒彬,洪根深..NLDMOS器件单粒子效应及Nbuffer加固[J].集成电路与嵌入式系统,2024,24(3):13-18,6.
