晶圆级薄膜铌酸锂波导制备工艺与性能表征OACSTPCD

With the rapid development of photonic integration and optical communication technology,low-loss waveguides have become the key components for efficient photonic transmission,and their performance directly affects the performance ofthe entire integrated chip.Therefore,the preparation technology of low-loss thin film lithium niobate(TFLN)waveguides is currently a hot and difficult research topic.In this study,in-depth research on the preparation process of wafer-level low-loss thin-film lithium niobate waveguides was conducted.On a 4-inch thin-film lithium niobate wafer,waveguides witha transmission loss of less than 0.15 dB/cm based on the deep-UV lithography and inductive coupled plasma etching were successfully prepared,while the etching depth error was controlled within 10％,greatly improving the accuracy of the waveguide structure.Additionally,this study also proposed a characterization method based on micro-ring resonators for wafer-level waveguide loss measurement,which can more accurately evaluate waveguide performance.Through testing,it is found that the qualified rate of the prepared waveguides exceeds 85％,demonstrating good reproducibility and reliability.The wafer-level thin film lithium niobate processing technology developed in this article is of great significance for promoting the large-scale preparation and application of lithium niobate waveguides.